Method for fabricating an electronic module via compression molding

ABSTRACT

An electronic module includes a semiconductor package having a die pad, a semiconductor die, and an encapsulant. The encapsulant has a first main face and a second main face opposite to the first main face. The die pad has a first main face and a second main face opposite to the first main face. The semiconductor die is disposed on the second main face of the die pad. An insulation layer is disposed on at least a portion of the first main face of the encapsulant and on the first main face of the die pad. The insulation layer is electrically insulating and thermally conducting. A heatsink is disposed on or in the insulation layer.

TECHNICAL FIELD

The present disclosure is related to an electronic module, an electronicdevice, and a method for fabricating an electronic module.

BACKGROUND

During operation an electronic module comprising a semiconductor die mayproduce heat which may have to be dissipated through one or moredesignated thermal pathways. A thermal pathway may be directed towards atop side of the electronic module, wherein heat dissipation means like,for example, a heat sink may be arranged on the top side of theelectronic module. It may be desirable to reduce a thermal resistancebetween the semiconductor die and the heat dissipation means in order toimprove a heat dissipation capability of the electronic module.

SUMMARY

A first aspect of the present disclosure is related to an electronicmodule comprising a semiconductor package comprising a die pad, asemiconductor die, and an encapsulant wherein the encapsulant comprisesa first main face and a second main face opposite to the first mainface, the die pad comprises a first main face and a second main faceopposite to the first main face, and the semiconductor die beingdisposed on the second main face of the die pad, an insulation layerdisposed on at least a portion of the first main face of the encapsulantand on the first main face of the die pad, wherein the insulation layeris electrically insulating and thermally conducting, and a heatsinkdisposed on or in the insulation layer so that main face of the heatsinkis exposed to the outside.

A second aspect of the present disclosure is related to a method forfabricating an electronic module, the method comprising providing asemiconductor package comprising a die pad, a semiconductor die, and anencapsulant, wherein the encapsulant comprises a first main face and asecond main face opposite to the first main face, the die pad comprisesa first main face and a second main face opposite to the first mainface, and the semiconductor being disposed on the second main face ofthe die pad, applying an insulation layer and a heatsink onto the firstmain face of the encapsulant and on the first main face of the die padso that the heatsink is disposed on or in the insulation layer, whereinthe insulation layer is electrically insulating and thermallyconducting.

A third aspect of the present disclosure is related to an electronicdevice comprising a semiconductor package comprising a die pad, asemiconductor die, and an encapsulant, wherein the encapsulant comprisesa first main face and a second main face opposite to the first mainface, the die pad comprises a first main face and a second main faceopposite to the first main face, and the semiconductor die beingdisposed on the second main face of the die pad, an insulation layerdisposed on the first main face of the encapsulant and on the first mainface of the die pad, wherein the insulation layer is electricallyinsulating and thermally conducting, a first heatsink disposed on or inthe insulation layer, and a second heatsink disposed on the insulationlayer and the first heatsink.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of embodiments and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments andtogether with the description serve to explain principles ofembodiments. Other embodiments and many of the intended advantages ofembodiments will be readily appreciated as they become better understoodby reference to the following detailed description.

The elements of the drawings are not necessarily to scale relative toeach other. Like reference numerals designate corresponding similarparts.

FIG. 1 shows a schematic side view representation (A) and a top viewrepresentation (B) of an example of an electronic module according tothe first aspect.

FIG. 2 shows a schematic cross-sectional side view representation of afurther example of an electronic module which comprises threesemiconductor dies and is mounted on a PCB, wherein an external heatsinkis applied onto the insulation layer and the heatsink.

FIG. 3 shows a schematic cross-sectional side view representation of afurther example of an electronic module which is similar to the exampleof FIG. 2, wherein the three semiconductor dies are arranged in one andthe same plane.

FIG. 4 shows a schematic cross-sectional side view representation (A)and a top view representation (B) of a further embodiment of anelectronic module which comprises three parallel external leads.

FIG. 5 shows a schematic cross-sectional side view representation of afurther example of an electronic module in which the heatsink comprisesa cooling channel with inlet and outlet openings for a cooling medium.

FIG. 6 shows respective schematic cross-sectional side viewrepresentations (A) and (B) of further examples of electronic modules inwhich the heatsink comprises a base body and a layer applied to the basebody.

FIG. 7 shows a flowchart of an example of a method of fabricating anelectronic module according to the second aspect.

FIG. 8 shows respective cross-sectional side view representations (A)through (F) of an electronic module in various stages of fabricationaccording to a further example of a method of fabricating an electronicmodule.

DETAILED DESCRIPTION

In the following detailed description, reference is made to theaccompanying drawings, which form a part hereof, and in which is shownby way of illustration specific embodiments in which the invention maybe practiced. In this regard, directional terminology, such as “top”,“bottom”, “front”, “back”, “leading”, “trailing”, etc., is used withreference to the orientation of the Figure(s) being described. Becausecomponents of embodiments can be positioned in a number of differentorientations, the directional terminology is used for purposes ofillustration and is in no way limiting. It is to be understood thatother embodiments may be utilized and structural or logical changes maybe made without departing from the scope of the present invention. Thefollowing detailed description, therefore, is not to be taken in alimiting sense, and the scope of the present invention is defined by theappended claims.

It is to be understood that the features of the various exemplaryembodiments described herein may be combined with each other, unlessspecifically noted otherwise.

As employed in this specification, the terms “bonded”, “attached”,“connected”, “coupled” and/or “electrically connected/electricallycoupled” are not meant to mean that the elements or layers must directlybe contacted together; intervening elements or layers may be providedbetween the “bonded”, “attached”, “connected”, “coupled” and/or“electrically connected/electrically coupled” elements, respectively.However, in accordance with the disclosure, the above-mentioned termsmay, optionally, also have the specific meaning that the elements orlayers are directly contacted together, i.e. that no interveningelements or layers are provided between the “bonded”, “attached”,“connected”, “coupled” and/or “electrically connected/electricallycoupled” elements, respectively.

Further, the word “over” used with regard to a part, element or materiallayer formed or located “over” a surface may be used herein to mean thatthe part, element or material layer be located (e.g. placed, formed,deposited, etc.) “indirectly on” the implied surface with one or moreadditional parts, elements or layers being arranged between the impliedsurface and the part, element or material layer. However, the word“over” used with regard to a part, element or material layer formed orlocated “over” a surface may, optionally, also have the specific meaningthat the part, element or material layer be located (e.g. placed,formed, deposited, etc.) “directly on”, e.g. in direct contact with, theimplied surface.

Devices or semiconductor packages containing semiconductor dies aredescribed below. The semiconductor dies may be of different types, maybe manufactured by different technologies and may include for exampleintegrated electrical, electro-optical or electro-mechanical circuitsand/or passives. The devices can be power devices and the packages canbe power packages. The semiconductor dies may, for example, be designedas logic integrated circuits, analog integrated circuits, mixed signalintegrated circuits, power integrated circuits, memory circuits orintegrated passives. They may include control circuits, microprocessorsor microelectromechanical components. Further, they may be configured aspower semiconductor dies, such as power MOSFETs (Metal OxideSemiconductor Field Effect Transistors), IGBTs (Insulated Gate BipolarTransistors), JFETs (Junction Gate Field Effect Transistors), powerbipolar transistors or power diodes. In particular, semiconductor dieshaving a vertical structure may be involved, that is to say that thesemiconductor dies may be fabricated in such a way that electriccurrents can flow in a direction perpendicular to the main faces of thesemiconductor dies. A semiconductor die having a vertical structure mayhave contact elements in particular on its two main faces, that is tosay on its top side and bottom side. In particular, power semiconductordies may have a vertical structure. By way of example, the sourceelectrode and gate electrode of a power MOSFET may be situated on onemain face, while the drain electrode of the power MOSFET is arranged onthe other main face. Furthermore, the electronic modules described belowmay include integrated circuits to control the integrated circuits ofother semiconductor dies, for example the integrated circuits of powersemiconductor dies. The semiconductor dies can be manufactured on thebasis of a specific semiconductor material, for example Si, SiC, SiGe,GaAs, GaN, AlGaAs, but can also manufactured on the basis of any othersemiconductor material and, furthermore, may contain inorganic and/ororganic materials that are not semiconductors, such as for exampleinsulators, plastics or metals.

The various examples of an electronic module described below may includeexternal contact elements. The external contact elements may representthe external terminals of the semiconductor package. They may beaccessible from outside the package and may thus allow electricalcontact to be made with the semiconductor dies(s) from outside thepackage. Furthermore, the external contact elements may be thermallyconductive and may serve as heat sinks for dissipating at least part ofthe heat generated by the semiconductor die. The external contactelements may be part of a leadframe, in particular a Cu leadframe.

The semiconductor package of the electronic module includes anencapsulant. The encapsulant may be a dielectric material and may bemade of any appropriate duroplastic, thermoplastic or thermosettingmaterial or laminate (prepreg) and may be made by molding. Theencapsulant may contain filler materials. After its deposition, theencapsulant may be only partially hardened and may be completelyhardened after application of energy (e.g. heat, UV light, etc.) to forman encapsulant. Various techniques may be employed to apply theencapsulant, for example transfer molding, compression molding,injection molding, powder molding, liquid molding, dispensing,laminating, or glob top.

FIG. 1 shows an electronic module according to the first aspect in aschematic side view representation (A) and in a top view representation(B). The electronic module 10 of FIG. 1 comprises a semiconductorpackage 1 comprising a die pad 1.1, a semiconductor die 1.2, and anencapsulant 1.3, wherein the encapsulant 1.3 comprises a first main faceand a second main face opposite to the first main face, the die pad 1.1comprises a first main face and a second main face opposite to the firstmain face, and the semiconductor die 1.2 being disposed on the secondmain face of the die pad 1.1, an insulation layer 2 disposed on thefirst main face of the encapsulant 1.3 and on the first main face of thedie pad 1.1, wherein the insulation layer 2 is electrically insulatingand thermally conducting, and a heatsink 3 disposed on or in theinsulation layer 2 so that a main face of the heatsink 3 is exposed tothe outside.

The electronic module 10 of FIG. 1 may also comprise external leadswhich are not shown for sake of clarity. The external leads can havedifferent forms which will be shown in further examples later.

According to an example of the electronic module of the first aspect,the insulation layer 2 comprises one or more of a resin matrix material,a thermoset material, an epoxy, a silicone, a thermal interfacematerial, a thermoplast, a thermal adhesive, a thermoplast, or a thermalinterface material (TIM). Any such kinds of host materials can inaddition be filled with a filler material configured to improve athermal conductivity of the host material. The filler material maycomprise particles of one or more of SiO2, Al2O3, AlN, Si3N4, BN, ordiamond. The insulation layer may comprise a thermal conductivity of >1W/mK, more specifically >2 W/mK, more specifically >3 W/mK.

According to an example of the electronic module of the first aspect,the heatsink 3 is formed of only one homogeneous material, in particulara metal as e.g. Cu or Al, or a thermal interface material (TIM). Theheatsink 3 may also be formed of a conductive adhesive, an indiumsolder, a copper paste, a phase change material, soft Al, pure Al, a CNCmaterial, a magnetic iron material, a Sn/Ag layer, or a porous layer ofany appropriate material. Also, ceramic can be used as a heatsink 3 insituations in which the aspect of isolation is very important so that adouble isolation in the form the insulation layer 2 and the heatsink 3appears to be desirable. The heatsink 3 may further comprise pin fins orother cooling structures on its outer surface.

Moreover, it is also possible that the heatsink 3 instead of being ofone homogeneous material, it can be formed of a composite comprising twoor more materials. In particular, the heatsink 3 may comprise a basebody and an additional layer disposed on the base body. Either the basebody or the additional layer can be comprised of one or more of thematerials as suggested above for the heatsink. A specific examplethereof will be shown and explained later. In case of ceramic alsodifferent ceramic layers can be employed or a ceramic layer togetherwith a layer with another material.

According to an example of the electronic module of the first aspect,the heatsink 3 comprises one or more of a metal as e.g. Cu or Al, aceramic, or a thermal interface material. Moreover, the heatsink 3 canbe formed plate-like and can have a quadratic or rectangular shape. Theplate can have a thickness in a range from 100 μm to 5 mm. The heatsink3 can also be comprised of a foil, in which case the thickness can be ina range from 5 μm to 100 μm.

According to an example of the electronic module of the first aspect, ata least a portion of the first main face of the die pad 1.1 is coplanarwith the first main face of the encapsulant 1.3. According to a furtherexample thereof, an entire first main face of the die pad 1.1 iscoplanar with the first main face of the encapsulant 1.3. It is alsopossible that the first main face of the encapsulant 1.3 containsgrooves or other specific surface properties that are not coplanar withthe first main face of the die pad 1.1.

According to an example of the electronic module of the first aspect,the heatsink 3 is embedded in the insulation layer 2 such that an outersurface of the heatsink 3 is situated slightly above an outer surface ofthe insulation layer 2.

According to an example of the electronic module of the first aspect,the insulation layer 2 comprises a thermal conductivity of >1 W/mK, morespecifically >2 W/mK, more specifically >3 W/mK.

According to an example of the electronic module of the first aspect thedie pad 1.1 is part of a leadframe. One or more further die pads and oneor more further semiconductor dies can be provided, each one of thefurther semiconductor dies being disposed on one of the one or morefurther die pads.

FIG. 2 shows a schematic cross-sectional side view representation of afurther example of an electronic module. The electronic module 20 ofFIG. 2 comprises a semiconductor package 21 comprising a leadframe 21.1,a first semiconductor die 21.2, a second semiconductor die 21.3, and athird semiconductor die 21.4. The first to third semiconductor dies 21.2to 21.4 are disposed on different portions of the leadframe 21.1. Thefirst semiconductor die 21.2 can be, for example, a semiconductortransistor die like e.g. an IGBT die. The second semiconductor die 21.3can be, for example, a semiconductor diode die connected in parallelwith the first semiconductor die 21.2. And the third semiconductor die21.4 can be, for example, a controller die.

The semiconductor package 21 further comprises an encapsulant 21.5,wherein the encapsulant 21.5 comprises a first upper main face and asecond lower main face opposite to the first main face. The first andsecond semiconductor dies 21.2 and 21.3 are disposed on first portionsof the leadframe 21.1 which are exposed to the outside of the packageand which are at least partially coplanar with the first upper main faceof the encapsulant 21.5. The third semiconductor die 21.4 is disposed onanother portion of the leadframe which is not exposed to the outside andcomplete embedded with the encapsulant 21.5.

The semiconductor package 21 further comprises an insulation layer 22disposed on the first main face of the encapsulant 21.5 and on the firstmain face of the die pad 21.1, wherein the insulation layer 22 iselectrically insulating and thermally conducting, and a heatsink 23disposed on or in the insulation layer 22. The insulation layer 22 andthe heatsink 23 can have the same properties and features as theinsulation layer 22 and the heatsink 23 of the example of FIG. 1. In theexample of FIG. 2 the heatsink 23 may be comprised of a foil.

The electronic module 20 can be configured as a dual-inline (DIP) modulewhich usually comprises a rectangular housing and two parallel rows ofelectrical connecting pins arranged on opposing sides. On the customer'sside the electronic module 20 may be through-hole mounted to a printedcircuit board (PCB) 24 and an external heatsink 25 can be arranged ontop of the insulation layer 22 and the heatsink 23.

FIG. 3 shows a schematic cross-sectional side view representation of afurther example of an electronic module. The electronic module 30 ofFIG. 3 is similar to the electronic module 20 of FIG. 2 so that thedifferent components of the electronic module 30 will not be describedagain. The electronic module 30 comprises a semiconductor package 31comprising a leadframe 31.1, a first semiconductor die 31.2, a secondsemiconductor die 31.3, and a third semiconductor die 31.4. The first tothird semiconductor dies 31.2 to 31.4 are disposed on different portionsof the leadframe 31.1 and they can be functionally similar to the firstof third semiconductor dies 21.2 to 21.4 of the example of FIG. 2.

Although in FIGS. 2 and 3 examples have been shown and described inwhich the present disclosure is employed in specific types ofsemiconductor packages, it should be emphasized that the presentdisclosure can be applied to practically all types of semiconductorpackages, including all types of TO (transistor outline) packages, BGA(ball grid array) packages, leadless packages, SMD (surface mountdevice) packages, etc. It should also be mentioned that the structure asshown in FIG. 1, for example, can also be built double-side, i.e.applying an insulation layer with embedded heatsink on the other side ofthe semiconductor package.

The semiconductor package 31 further comprises an encapsulant 31.5,wherein the encapsulant 31.5 comprises a first upper main face and asecond lower main face opposite to the first main face. As a differenceto the semiconductor module 20 of FIG. 2, the first to thirdsemiconductor dies 31.2 to 31.4 are disposed on portions of theleadframe 31.1 which are all exposed to the outside of the package 31and which are at least partially coplanar with the first upper main faceof the encapsulant 31.5.

The semiconductor package 31 further comprises an insulation layer 32disposed on the first main face of the encapsulant 31.5 and on the firstmain face of the die pad 31.2, wherein the insulation layer 32 iselectrically insulating and thermally conducting, and a heatsink 33 isdisposed on or in the insulation layer 2. As a further difference to theelectronic module 20 of FIG. 2, the insulation layer 32 and the heatsink33 are formed much thicker. On the customer's side the electronic module30 may be through-hole mounted to a printed circuit board (PCB) 34 andan external heatsink 35 can be arranged on top of the insulation layer32 and the heatsink 33. In the example of FIG. 3 the heatsink 33 may becomprised of a plate, in particular a Cu plate.

FIG. 4 shows a top view representation (A) and a cross-sectional sideview representation (B) of a further example of an electronic modulewhich is an example of a transistor outline (TO) package. The electronicmodule 40 of FIG. 4 comprises a semiconductor package 41 comprising adie pad 41.1 having a semiconductor die disposed thereon (not shown).The semiconductor package 41 further comprises three parallel externalleads 41.2, 41.3, and 41.4. The external leads 41.2 to 41.4 and the diepad 41.1 can be part of a leadframe. The semiconductor package 41further comprises an encapsulant 41.5 the shape and properties of whichcan be equal or similar to the encapsulants of the previously describedexamples.

The electronic module 40 further comprises an insulation layer 42 and aheatsink 43 which is embedded in the insulation layer 42. Both theinsulation layer 42 and the heatsink 43 can have shapes and propertiessimilar or equal to the insulation layers and heatsinks of thepreviously describe examples.

FIG. 5 shows a schematic cross-sectional side view representation of afurther example of an electronic module. The electronic module 50comprises a semiconductor package 51 comprising a die pad 51.1 whichsupports a semiconductor die (not shown). The semiconductor package 51further comprises an encapsulant 51.3 wherein the die pad 51.1 isembedded in the encapsulant 51.3. The semiconductor package 51, the diepad 51.1, and the encapsulant 51.3 can have the same shapes andproperties as the semiconductor packages, die pads and encapsulantsshown and described in the previous examples.

The electronic module 50 further comprises an insulation layer 52 and aheatsink 53 embedded within the insulation layer 52. The heatsink 53comprises a cooling channel 53.1 with inlet and outlet openings for acooling medium to flow through the cooling channel 53.1. The coolingmedium can be liquid or gaseous and can, for example, be air or water.There can be more than one channel between the inlet and outlet openingsand there be also more than one inlet opening and more than one outletopening at the ends of the one or more channels. The heatsink 53 may beconfigured such that in addition an external heatsink can be disposedonto the upper surface of the insulation layer 53. Such an externalheatsink would have to be configured such that it contains suitablethrough-bores which would act as passages for the cooling medium to andfrom the inlet and outlet openings.

FIG. 6 shows two different examples (A), (B) of electronic modules inwhich the heatsink comprises a base body and an additional layer appliedto the base body.

Example A in FIG. 6 is an electronic module 60_1 that comprises asemiconductor package 61 comprising a die pad 61.1 which supports asemiconductor die (not shown). The semiconductor package 61 furthercomprises an encapsulant 61.3 wherein the die pad 61.1 is embedded inthe encapsulant 61.3. The semiconductor package 61, the die pad 61.1,and the encapsulant 61.3 can have the same shapes and properties as thesemiconductor packages, die pads and encapsulants shown and described inthe previous examples.

The electronic module 60_1 further comprises an insulation layer 62 anda heatsink 63 embedded within the insulation layer 62. The heatsink 63comprises a base body 63.1 and an additional layer 63.2 applied onto anupper surface of the base body 63.1. The material of the base body 63.1can be any one of the materials which were suggested above for thepreviously described heatsinks. The material of the additional layer63.2 can, for example, be any kind of thermal interface material (TIM).In particular, the material of the additional layer 63.2 can be selectedin order to improve a heat transition to an external heat sink to beapplied there. The electronic module 60_1 could be fabricated such thatthe additional layer 63.2 is applied onto the base body 63.1 beforemolding of the insulation layer 62.

Example B in FIG. 6 is an electronic module 60_2 which is similar to theelectronic module 60_1 of example A so that the same reference numberswere used for the components. The only difference is that only the basebody 63.1 is embedded in the insulation layer 62, but the additionallayer 63.2 is situated above the insulation layer 62. The electronicmodule 60_2 could be fabricated such that the additional layer 63.2 isapplied onto the base body 63.1 after molding of the insulation layer62.

FIG. 7 shows a flowchart of an example of a method of fabricating anelectronic module according to the second aspect.

According to FIG. 7 the method 70 comprises providing a semiconductorpackage comprising a die pad, a semiconductor die, and an encapsulant,wherein the encapsulant comprises a first main face and a second mainface opposite to the first main face, the die pad comprises a first mainface and a second main face opposite to the first main face, and thesemiconductor being disposed on the second main face of the die pad(71), applying an insulation layer and a heatsink onto the first mainface of the encapsulant and on the first main face of the die pad sothat the heatsink is disposed on or in the insulation layer, wherein theinsulation layer is electrically insulating and thermally conducting(72).

According to an example of the method 70 of FIG. 7, applying of theinsulation layer and the heatsink comprises molding, in particularcompression molding. More specifically, the material of the insulationlayer can be dispensed in liquid form onto an upper surface of theencapsulant and the die pad and thereafter the heatsink can be placedonto the dispensed liquid material of the insulation layer. Thereafterthe assembly can be placed in a compression molding apparatus and anupper mold tool of the molding apparatus can be pressed downwardsagainst the liquid material of the insulation and the heatsink. Afterreaching an end position of the upper mold tool the liquid material canbe cured and hardened. After hardening of the insulation layer, theassembly can be taken out of the molding apparatus. The whole processwill be described in more detail in the following.

FIG. 8 shows cross-sectional side view representations (A) through (F)of an electronic module in various stages of fabrication according to afurther example of a method of fabricating an electronic module.

Representation A in FIG. 8 shows a semiconductor package 81 comprising adie pad 81.1, a semiconductor die 81.2 disposed on the die pad 81.1, andan encapsulant in which the die pad 81.1 and the semiconductor die 81.2are embedded. It should be noted that not only one semiconductor packagebut instead a plurality of semiconductor packages can be provided andprocessed.

Representation B in FIG. 8 shows the dispensing of a liquid material82.1 by a dispenser 82.2. The liquid material will be fabricated to theinsulation layer and it can be in principle selected out of any one ofthe materials which were suggested above. In case of compressionmolding, for example, an epoxy resin can be used which can be cured andhardened after molding. The epoxy resin may contain filler materials, inparticular micro particles in order to increase the thermal conductanceof the insulation layer to be fabricated. Suitable materials ofparticles have already been suggested above.

Representation C in FIG. 8 shows the semiconductor package 81 with thedispensed liquid material 82.1 and a heatsink 83 placed upon thedispensed liquid material. The heatsink 83 can be, for example, a pieceof copper, but also any other materials for the heatsink can be usedwhich were suggested above.

Representation D in FIG. 8 shows the assembly placed in a compressionmolding apparatus. The molding apparatus comprises an upper mold tool 84and a lower mold tool (not shown). The assembly is placed onto the lowermold tool. The upper mold tool 84 comprises a recessed portion whichcorresponds to the shape and contour of the shape and contour of theinsulation layer and heatsink to be fabricated. A vacuum of e.g. 1 mbarcan be applied. The upper mold tool 84 is moved downwards (see arrows)until the encapsulant has reached an end pressure. In the end positionthe recessed portion of the upper mold tool 84 is completely filled bythe liquid material and the heatsink with respect to the volume of thecavity, the volume of the mold, and the volume of the heatsink.

Representation E in FIG. 8 shows the situation after reaching an endposition of the upper mold tool 84. Thereafter heat is applied to theinsulation layer 82 so that the insulation layer 82 can be cured.

Representation F in FIG. 8 shows the final product after curing of theinsulation layer 82 and taking the product out of the molding apparatus.The electronic module as shown in FIG. 8 corresponds to the electronicmodule as shown in FIG. 1.

In the following electronic modules and methods for fabricatingelectronic modules will be described by way of examples.

Example 1 is an electronic module comprising a semiconductor packagecomprising a die pad, a semiconductor die, and an encapsulant, whereinthe encapsulant comprises a first main face and a second main faceopposite to the first main face, the die pad comprises a first main faceand a second main face opposite to the first main face, and thesemiconductor die is disposed on the second main face of the die pad, aninsulation layer disposed on at least a portion of the first main faceof the encapsulant and on the first main face of the die pad, whereinthe insulation layer is electrically insulating and thermallyconducting, and a heatsink disposed on or in the insulation layer,wherein a main face of the heatsink is exposed to the outside.

Example 2 is an electronic module according to Example 1, wherein theinsulation layer comprises one or more of a resin matrix material, athermoset material, an epoxy, a silicone, a thermal interface material,a thermoplast, a thermal adhesive, a thermoplast, or a thermal interfacematerial (TIM).

Example 3 is an electronic module according to Examples 1 or 2, whereinthe insulation layer comprises a resin matrix material or a hostmaterial which is filled with a filler material configured to improve athermal conductivity of the host material.

Example 4 is an electronic module according to Example 3, wherein thefiller material comprises particles of one or more of SiO, AlO, AlN, orBN.

Example 5 is an electronic module according to any one of the precedingexamples, wherein the heatsink comprises one or more of a metal, aceramic, or a thermal interface material plate.

Example 6 is an electronic module according to any one of the precedingexamples, wherein the heatsink is formed plate-like.

Example 7 is an electronic module according to Example 6, wherein athickness of the plate-like heatsink is in a range from 100 μm to 5 mm.

Example 8 is an electronic module according to any one of examples 1 to5, wherein the heatsink is formed of a foil.

Example 9 is an electronic module according to Example 8, wherein athickness of the foil is in a range from 5 μm to 100 μm.

Example 10 is an electronic module according to any one of the precedingexamples, wherein the heatsink is formed of only one homogeneousmaterial.

Example 11 is an electronic module according to any one of examples 1 to7, wherein the heatsink is formed of a composite comprising two or morematerials.

Example 12 is an electronic module according to example 11, wherein theheatsink comprises a base body and a layer disposed on the base body.

Example 13 is an electronic module according to any one of the precedingexamples, wherein the die pad is part of a leadframe.

Example 14 is an electronic module according to any one of the precedingexamples, comprising one or more further die pads and one or morefurther semiconductor dies, each one being disposed on one of the one ormore further die pads.

Example 15 is an example of an electronic module comprising asemiconductor package comprising a die pad, a semiconductor die, and anencapsulant, wherein the encapsulant comprises a first main face and asecond main face opposite to the first main face, the die pad comprisesa first main face and a second main face opposite to the first mainface, and the semiconductor die being disposed on the second main faceof the die pad, an insulation layer disposed on the first main face ofthe encapsulant and on the first main face of the die pad, wherein theinsulation layer is electrically insulating and thermally conducting, afirst heatsink disposed on or in the insulation layer, and a secondheatsink disposed on the insulation layer and the first heat sink.

Example 16 is an example of a method for fabricating an electronicmodule, the method comprising providing a semiconductor packagecomprising a die pad, a semiconductor die, and an encapsulant, whereinthe encapsulant comprises a first main face and a second main faceopposite to the first main face, the die pad comprises a first main faceand a second main face opposite to the first main face, and thesemiconductor being disposed on the second main face of the die pad,applying an insulation layer and a heatsink onto the first main face ofthe encapsulant and on the first main face of the die pad so that theheatsink is disposed on or in the insulation layer, wherein theinsulation layer is electrically insulating and thermally conducting.

Example 17 is a method according to Example 16, wherein applying theinsulation layer and the heat spreader comprises molding.

Example 18 is a method according to Example 17, further comprisingapplying the insulation layer and the heatsink in such a way that theheatsink is embedded in the insulation layer so that an outer surface ofthe heatsink is disposed slightly above an outer surface of theinsulation layer.

Example 19 is a method according to any one of examples 16 to 18,wherein two or more electronic modules are fabricated in parallel.

In addition, while a particular feature or aspect of an embodiment ofthe invention may have been disclosed with respect to only one ofseveral implementations, such feature or aspect may be combined with oneor more other features or aspects of the other implementations as may bedesired and advantageous for any given or particular application.Furthermore, to the extent that the terms “include”, “have”, “with”, orother variants thereof are used in either the detailed description orthe claims, such terms are intended to be inclusive in a manner similarto the term “comprise”. Furthermore, it should be understood thatembodiments of the invention may be implemented in discrete circuits,partially integrated circuits or fully integrated circuits orprogramming means. Also, the term “exemplary” is merely meant as anexample, rather than the best or optimal. It is also to be appreciatedthat features and/or elements depicted herein are illustrated withparticular dimensions relative to one another for purposes of simplicityand ease of understanding, and that actual dimensions may differsubstantially from that illustrated herein.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed is:
 1. A method for fabricating an electronic module,the method comprising: providing a semiconductor package comprising adie pad, a semiconductor die, and an encapsulant, the encapsulantcomprising a first main face and a second main face opposite to thefirst main face, the die pad comprising a first main face and a secondmain face opposite to the first main face, the semiconductor beingdisposed on the second main face of the die pad; and applying aninsulation layer and a heatsink onto the first main face of theencapsulant and on the first main face of the die pad so that theheatsink is disposed on or in the insulation layer, the insulation layerbeing electrically insulating and thermally conducting, wherein applyingthe insulation layer and the heatsink comprises: dispensing a liquidmaterial of the insulation layer onto the first main face of theencapsulant and onto the first main face of the die pad; after thedispensing, placing the heatsink onto the liquid material to form anassembly; placing the assembly in a compression molding apparatus;pressing an upper mold tool of the compression molding apparatusdownwards against both the liquid material and the heatsink; afterreaching an end position of the upper mold tool, curing and hardeningthe liquid material to form the insulation layer; and after curing andhardening the liquid material, removing the assembly from thecompression molding apparatus.
 2. The method of claim 1, wherein theinsulation layer and the heatsink are applied such that the heatsink isembedded in the insulation layer and an outer surface of the heatsink isdisposed slightly above an outer surface of the insulation layer.
 3. Themethod of claim 1, wherein two or more electronic modules are fabricatedin parallel.
 4. The method of claim 1, wherein the liquid material is anepoxy resin.
 5. The method of claim 4, wherein the epoxy resin containsfiller materials.
 6. The method of claim 5, wherein the filler materialscomprise one or more of SiO2, Al2O3, AlN, Si3N4, BN, and diamond.
 7. Themethod of claim 1, wherein the upper mold tool a recessed portion whichcorresponds to a final shape and a final contour of the insulation layerand the heatsink to be fabricated.
 8. The method of claim 7, wherein inthe end position, the recessed portion of the upper mold tool iscompletely filled by the liquid material and the heatsink.
 9. The methodof claim 1, wherein curing the liquid material comprises applying heatto the liquid material.
 10. The method of claim 1, wherein the heatsinkis a piece of copper.